公开(公告)号：US20100081284A1

公开(公告)日：2010-04-01

申请号：US12240090

申请日：2008-09-29

申请人： AJIT BALAKRISHNA ,  Aniruddha Pal ,  James D. Carducci ,  Semyon L. Kats ,  Shahid Rauf

发明人： AJIT BALAKRISHNA ,  Aniruddha Pal ,  James D. Carducci ,  Semyon L. Kats ,  Shahid Rauf

IPC分类号： H01L21/3065 ,  C23F1/08 ,  C23C16/00

CPC分类号： H01J37/32449 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/321 ,  H01J37/3244

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.

摘要翻译： 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的装置包括流量均衡器，其被配置为控制处理室的处理容积和排气口之间的气体流。 流量均衡器包括至少一个限制器板，其被配置为设置在接近要处理的基板的表面的平面中，并且限定了至少一个限制器板的边缘与腔室壁中的一个之间的方位不均匀的间隙 或安装在处理室中时的基板支撑件。

公开(公告)号：US20130008604A1

公开(公告)日：2013-01-10

申请号：US13613941

申请日：2012-09-13

申请人： KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

发明人： KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

IPC分类号： H01L21/306

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

公开(公告)号：US20120273341A1

公开(公告)日：2012-11-01

申请号：US13442478

申请日：2012-04-09

申请人： ANKUR AGARWAL ,  AJIT BALAKRISHNA ,  SHAHID RAUF

发明人： ANKUR AGARWAL ,  AJIT BALAKRISHNA ,  SHAHID RAUF

IPC分类号： H05H1/24 ,  B44C1/22

CPC分类号： H05H1/46 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32165 ,  H05H2001/4682

摘要： Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.

摘要翻译： 本文提供了用于控制等离子体的方法和装置。 在一些实施例中，一种方法可以包括从RF功率源向第一电极提供具有第一频率和第一周期的第一RF信号，其中第一周期是第一频率的第一整数个第一周期; 提供从RF电源到第一电极的具有第二频率和第二周期的第二RF信号，其中第二周期是第二频率的第二整数倍的第二周期，并且其中第一频率和第二频率的第一乘法乘积 第一整数等于第二频率和第二整数的第二乘法乘积; 以及控制第一和第二周期之间的相位，以控制在处理室中形成的等离子体的离子能量分布。

公开(公告)号：US20090230089A1

公开(公告)日：2009-09-17

申请号：US12047492

申请日：2008-03-13

申请人： KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

发明人： KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

IPC分类号： B01J19/08 ,  C23F1/00

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/32045 ,  H01J37/32091

摘要： A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.

摘要翻译： 公开了一种用于控制等离子体均匀性的方法和装置。 当蚀刻基板时，不均匀的等离子体可能导致基板的不均匀蚀刻。 阻抗电路可以减轻不均匀的等离子体以允许更均匀的蚀刻。 阻抗电路可以设置在室壁和地面之间，淋浴头和地面以及阴极罐和地面之间。 阻抗电路可以包括电感器和电容器中的一个或多个。 电感器的电感和电容器的电容可以被预先确定，以确保等离子体是均匀的。 此外，可以在处理期间或在处理步骤之间调整电感和电容以适应特定工艺的需要。

公开(公告)号：US20110284166A1

公开(公告)日：2011-11-24

申请号：US13191850

申请日：2011-07-27

申请人： JAMES D. CARDUCCI ,  ANDREW NGUYEN ,  AJIT BALAKRISHNA ,  MICHAEL C. KUTNEY

发明人： JAMES D. CARDUCCI ,  ANDREW NGUYEN ,  AJIT BALAKRISHNA ,  MICHAEL C. KUTNEY

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。