公开(公告)号：US20230245899A1

公开(公告)日：2023-08-03

申请号：US18162454

申请日：2023-01-31

Applicant: ASM IP Holding, B.V.

Inventor： Georgi Popov ,  Alexander Weiss ,  Mikko Ritala ,  Marianna Kemell

IPC: H01L21/3205

CPC classification number: H01L21/32051

Abstract: The current disclosure relates to a method of depositing a metal halide-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a metal precursor into the reaction chamber in a vapor phase and providing a halogen precursor into the reaction chamber in a vapor phase to form the metal halide-comprising material on the substrate. In the method, the metal precursor comprises a metal atom having an oxidation state of +1 bonded to an organic ligand. Also, a deposition assembly for depositing a metal halide-comprising material is disclosed.