公开(公告)号：US12153354B2

公开(公告)日：2024-11-26

申请号：US17792852

申请日：2020-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Wouter Jan Cornelis Vijselaar ,  Hugo Thomas Looijestijn

IPC: G03F7/00

Abstract: A method of using a dual stage lithographic apparatus, wherein the lithographic apparatus includes: two substrate supports each arranged to move and support a substrate, a measure field in which selectively one of the two substrate supports is positioned to measure a feature of the substrate supported by the respective one of the two substrate supports, and an expose field in which selectively one of the two substrate supports is positioned to expose the substrate supported by the respective one of the two substrate supports to a patterned beam of radiation, the method including thermal relaxation of a substrate loaded on one of the two substrate supports, wherein the thermal relaxation is at least partially performed at the expose field and/or in transfer between the measure field and the expose field.