公开(公告)号：US12191112B2

公开(公告)日：2025-01-07

申请号：US17786190

申请日：2020-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Zhengwei Zhou ,  Lingling Pu

IPC: H01J37/24 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

Abstract: A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.