公开(公告)号：US20200026182A1

公开(公告)日：2020-01-23

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel GARCIA GRANDA ,  Steven Erik STEEN ,  Eric Jos Anton BROUWER ,  Bart Peter Bert SEGERS ,  Pierre-Yves Jerome Yvan GUITTET ,  Frank STAALS ,  Paulus Jacobus Maria VAN ADRICHEM

IPC: G03F1/44 ,  G03F1/84 ,  G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.