公开(公告)号：US11114370B2

公开(公告)日：2021-09-07

申请号：US16675013

申请日：2019-11-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shun-Tsat Tu ,  Hong-Jyun Lin ,  Yi Tong Chiu ,  Yi Chun Wu

IPC: H01L23/498 ,  H01L21/768 ,  H01L23/00

Abstract: A semiconductor device package includes a substrate, a redistribution structure, a conductive pad, a conductive element, and a conductive via. The redistribution structure is disposed over the substrate and includes a first dielectric layer and a first conductive layer. The conductive pad is disposed on a first surface of the first dielectric layer. The conductive element is disposed in the first dielectric layer and is electrically connected to the conductive pad. The conductive via extends from the conductive pad toward the substrate through the conductive element and the first dielectric layer. The first conductive layer is separated from the conductive via.