公开(公告)号：US11515249B2

公开(公告)日：2022-11-29

申请号：US17090671

申请日：2020-11-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chih-Yi Huang ,  Chen-Chao Wang ,  Mi-Chun Hung

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: At least some embodiments of the present disclosure relate to a wiring structure and a method for manufacturing a wiring structure. The wiring structure includes a conductive structure, a first fan-out structure, and a second fan-out structure. The first fan-out structure is disposed on the conductive structure and includes a first circuit layer. The second fan-out structure is disposed on the conductive structure, and includes a second circuit layer. A thickness of the first circuit layer is different from a thickness of the second circuit layer.