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    Electron beam exposure apparatus, adjusting method, and block mask for adjustment
    2.
    发明授权
    Electron beam exposure apparatus, adjusting method, and block mask for adjustment 失效
    电子束曝光装置，调节方法和调整用遮光罩

    公开(公告)号：US06573519B1

    公开(公告)日：2003-06-03

    申请号：US09651469

    申请日：2000-08-30

    申请人： Akio Takemoto

    发明人： Akio Takemoto

    IPC分类号： G21K510

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0453 ,  H01J2237/31776

    摘要： This adjusting method can determine the precise deflection amount of mask deflectors corresponding to each aperture pattern by precisely measuring the position of the beam deflected by the mask deflectors in relation to that of each aperture pattern in an electron beam exposure apparatus, comprising an electron gun, a block mask, plural mask deflectors that deflect the electron beam so as to pass through one of the plural aperture patterns selectively, convergent devices that converge the electron beam onto a specimen, and deflectors that deflect the electron beam on the specimen. The electron beam exposure apparatus has the ability to expose the patterns corresponding to the selected aperture patterns, at one time, and in which the plural aperture patterns are square or rectangular and arranged in a matrix form, each aperture pattern has a square or rectangular maximum aperture area that limits the area in which each aperture is formed, the block mask has at least one adjusting aperture pattern equipped with independent apertures of the same shape arranged along the opposite sides of the maximum aperture area, and the mask deflectors are adjusted so that the intensity of the beam, which is radiated onto the specimen, at the portion of the independent apertures of the same shape arranged along the opposite sides of the adjusting aperture pattern, is uniform and maximum.

    摘要翻译： 该调整方法可以通过在包括电子枪的电子束曝光装置中精确测量由掩模偏转器偏转的光束相对于每个孔径图案的光束的位置来确定对应于每个孔径图案的掩模偏转器的精确偏转量， 块掩模，使电子束偏转以便选择性地穿过多个孔径图案中的一个的多个掩模偏转器，将电子束会聚到样本上的会聚装置以及偏转电子束在样本上的偏转器。 电子束曝光装置能够一次曝光对应于所选孔径图案的图案，并且其中多个孔径图案是正方形或矩形并以矩阵形式布置，每个孔图案具有正方形或矩形最大值 限制每个孔径形成区域的开口面积，阻挡掩模具有至少一个调节孔图案，其具有沿着最大开口面积的相对侧布置的相同形状的独立孔，并且调整掩模偏转器，使得 在沿着调节孔图案的相对侧布置的相同形状的独立孔的部分处辐射到样本上的光束的强度是均匀和最大的。