摘要:
A high-temperature superconducting magnetic sensor having a superconducting layer formed on a substrate and a plurality of superconducting quantum interference devices fabricated on the superconducting layer, which includes: a plurality of input coils that are formed on the superconducting layer and connected to or magnetically coupled with each of the plurality of the superconducting quantum interference devices; a pickup coil that is formed on the superconducting layer and connected so as to form a closed loop together with the plurality of the input coils; and a plurality of trimming wires that are formed on the superconducting layer and can be cut off, while making a short-circuit between both ends of each of the plurality of the input coils.
摘要:
A high-temperature superconducting magnetic sensor having superconducting layers formed on a substrate, a superconducting quantum interference device (SQUID) being formed on the superconducting layers, the high-temperature superconducting magnetic sensor includes: a pickup coil that is formed on the superconducting layer and is connected to an inductor of the SQUID; and an input coil that is formed on the superconducting layer, is connected to the inductor of the SQUID and the pickup coil to form a closed loop, and is magnetically coupled with the inductor of the SQUID. In planar view, at least one turn of the input coil surrounds the inductor of the SQUID, or is surrounded by the inductor of the SQUID. The width of the superconductor forming the inductor of the SQUID is 10 μm or less.
摘要:
A high-temperature superconducting magnetic sensor having superconducting layers formed on a substrate, a superconducting quantum interference device (SQUID) being formed on the superconducting layers, the high-temperature superconducting magnetic sensor includes: a pickup coil that is formed on the superconducting layer and is connected to an inductor of the SQUID; and an input coil that is formed on the superconducting layer, is connected to the inductor of the SQUID and the pickup coil to form a closed loop, and is magnetically coupled with the inductor of the SQUID. In planar view, at least one turn of the input coil surrounds the inductor of the SQUID, or is surrounded by the inductor of the SQUID. The width of the superconductor forming the inductor of the SQUID is 10 μm or less.
摘要:
A high-temperature superconducting magnetic sensor having a superconducting layer formed on a substrate and a plurality of superconducting quantum interference devices fabricated on the superconducting layer, which includes: a plurality of input coils that are formed on the superconducting layer and connected to or magnetically coupled with each of the plurality of the superconducting quantum interference devices; a pickup coil that is formed on the superconducting layer and connected so as to form a closed loop together with the plurality of the input coils; and a plurality of trimming wires that are formed on the superconducting layer and can be cut off, while making a short-circuit between both ends of each of the plurality of the input coils.
摘要:
A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.
摘要:
A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.
摘要:
A Josephson device includes a first superconducting electrode layer, a barrier layer, and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
摘要翻译:约瑟夫森器件包括依次层叠的第一超导电极层,阻挡层和第二超导电极层。 第一和第二超导电极层由具有(RE)1(AE)2Cu 3 O y作为主要成分的氧化物超导体材料制成,其中元素RE为选自Y,La,Pr,Nd中的至少一种元素 ,Sm,Eu,Gd,Dy,Ho,Er,Tm,Yb和Lu,元素AE为选自Ba,Sr和Ca中的至少一种元素。 阻挡层由包括元素RE,元素AE,Cu和氧的材料制成,其中阻挡层具有与第一和第二超导电极层的组成不同的组成。
摘要:
A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
摘要:
A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more elements selected from the group of Ba, Sr and Ca, and Cu and oxygen, wherein the two superconductors each include at least five elements with compositions different from each other, or the barrier layer (5) includes one or more elements selected from the group of La, Nd, Sm and Eu, and one or more elements selected from the group of Y, Gd, Dy, Ho, Er, Tm, Yb and Lu.
摘要:
A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
摘要翻译:约瑟夫逊装置包括依次堆叠的第一超导电极层,阻挡层和第二超导电极层。 第一和第二超导电极层由具有(RE)1(AE)2 Cu 3 O 3的氧化物超导体材料制成, 其中元素RE为选自Y,La,Pr,Nd,Sm,Eu,Gd,Dy,Ho,Er,Tm,Yb和Lu中的至少一种元素 元素AE为选自Ba,Sr和Ca中的至少一种元素。 阻挡层由包括元素RE,元素AE,Cu和氧的材料制成,其中在形成阻挡层的材料内的阳离子中Cu含量在35Aa的范围内。 %至55 At。 %,RE含量在12 At范围内。 %至30 At。 %,并且阻挡层具有与第一和第二超导电极层的组成不同的组成。