公开(公告)号：US06723622B2

公开(公告)日：2004-04-20

申请号：US10081099

申请日：2002-02-21

申请人： Anand Murthy ,  Ravindra Soman ,  Boyan Boyanov

发明人： Anand Murthy ,  Ravindra Soman ,  Boyan Boyanov

IPC分类号： H01L21365

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66916 ,  Y10T428/12674

摘要： A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing a silicon source gas and increasing a germanium source gas over a predetermined amount of time. The graded germanium film comprises an ultra-thin silicon-germanium buffer layer and a germanium film.

摘要翻译： 用于半导体器件的锗膜的复合材料及其制造方法。 该方法包括在沉积室中在半导体衬底上生长渐变锗膜，同时降低沉积温度并减少硅源气体并增加锗源气体超过预定时间量。 分级锗膜包括超薄硅 - 锗缓冲层和锗膜。

公开(公告)号：US20050079660A1

公开(公告)日：2005-04-14

申请号：US10917165

申请日：2004-08-11

申请人： Anand Murthy ,  Boyan Boyanov ,  Ravindra Soman ,  Robert Chau

发明人： Anand Murthy ,  Boyan Boyanov ,  Ravindra Soman ,  Robert Chau

IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/45 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L29/66477 ,  H01L21/2254 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

摘要翻译： 晶体管通过生长锗源极和漏极区域，将掺杂杂质注入到锗中并随后对源极和漏极区域进行退火来制造，使得掺杂剂杂质扩散通过锗。 该方法比其中锗掺杂有p型或n型杂质的方法简单。 掺杂剂杂质易于通过锗扩散，但不容易通过下面的硅，使得锗和硅之间的界面充当扩散势垒，并确保掺杂剂原子在其中提高晶体管性能的区域中的位置。

公开(公告)号：US06812086B2

公开(公告)日：2004-11-02

申请号：US10197041

申请日：2002-07-16

申请人： Anand S. Murthy ,  Boyan Boyanov ,  Ravindra Soman ,  Robert S. Chau

发明人： Anand S. Murthy ,  Boyan Boyanov ,  Ravindra Soman ,  Robert S. Chau

IPC分类号： H01L218238

CPC分类号： H01L29/66477 ,  H01L21/2254 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

摘要翻译： 晶体管通过生长锗源极和漏极区域，将掺杂杂质注入到锗中并随后对源极和漏极区域进行退火来制造，使得掺杂剂杂质扩散通过锗。 该方法比其中锗掺杂有p型或n型杂质的方法简单。 掺杂剂杂质易于通过锗扩散，但不容易通过下面的硅，使得锗和硅之间的界面充当扩散势垒，并确保掺杂剂原子在其中提高晶体管性能的区域中的位置。

公开(公告)号：US06933589B2

公开(公告)日：2005-08-23

申请号：US10917165

申请日：2004-08-11

申请人： Anand S. Murthy ,  Boyan Boyanov ,  Ravindra Soman ,  Robert S. Chau

发明人： Anand S. Murthy ,  Boyan Boyanov ,  Ravindra Soman ,  Robert S. Chau

IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/45 ,  H01L29/78 ,  H01L31/117 ,  H01L31/0288

CPC分类号： H01L29/66477 ,  H01L21/2254 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Transistors are manufactured by growing germanium source and drain regions, implanting dopant impurities into the germanium, and subsequently annealing the source and drain regions so that the dopant impurities diffuse through the germanium. The process is simpler than a process wherein germanium is insitu doped with p-type or n-type impurities. The dopant impurities diffuse easily through the germanium but not easily through underlying silicon, so that an interface between the germanium and silicon acts as a diffusion barrier and ensures positioning of the dopant atoms in the regions of the device where they improve transistor performance.

公开(公告)号：US07005359B2

公开(公告)日：2006-02-28

申请号：US10715971

申请日：2003-11-17

申请人： Shahriar Ahmed ,  Ravindra Soman ,  Anand Murthy ,  Mark Bohr

发明人： Shahriar Ahmed ,  Ravindra Soman ,  Anand Murthy ,  Mark Bohr

IPC分类号： H01L21/331

CPC分类号： H01L29/66287 ,  H01L29/42304 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

摘要翻译： 描述了双极晶体管及其制造。 通过在第一外延层上生长第二更重掺杂的外延层来形成非本征基区。 第二层在覆盖多晶硅发射器基座的下方延伸并与其绝缘。

公开(公告)号：US07517768B2

公开(公告)日：2009-04-14

申请号：US10404781

申请日：2003-03-31

申请人： Ravindra Soman ,  Anand Murthy ,  Peter VanDerVoorn ,  Shahriar Ahmed

发明人： Ravindra Soman ,  Anand Murthy ,  Peter VanDerVoorn ,  Shahriar Ahmed

IPC分类号： H01L21/331

CPC分类号： H01L29/66242

摘要： A bipolar transistor with a SiGe:C film and a seed layer forming beneath the SiGe:C film and methods of making same. The method includes placing a substrate in a reactor chamber and introducing a silicon source gas into the reactor chamber to form a silicon seed layer. The reactor chamber is maintained at a pressure below 45 Torr and a temperature between about 700° C. and 850° C. After the seed layer is formed, the silicon source gas is stopped. The reactor chamber is then simultaneously adjusted to a pressure between about 70 Torr and 90 Torr and a temperature between about 600° C. and 650° C. The silicon source gas, a germanium source gas, and a carbon source gas are introduced to form the SiGe:C film on the seed layer.

摘要翻译： 具有SiGe：C膜的双极晶体管和形成在SiGe：C薄膜下面的晶种层及其制造方法。 该方法包括将基板放置在反应器室中并将硅源气体引入反应器室以形成硅籽晶层。 反应室保持在低于45托的压力和约700℃至850℃之间的温度。形成种子层之后，停止硅源气体。 然后将反应器室同时调节至约70托和90托之间的压力以及约600℃和650℃之间的温度。引入硅源气体，锗源气体和碳源气体以形成 种子层上的SiGe：C膜。

公开(公告)号：US20060113634A1

公开(公告)日：2006-06-01

申请号：US11269477

申请日：2005-11-07

申请人： Shahriar Ahmed ,  Ravindra Soman ,  Anand Murthy ,  Mark Bohr

发明人： Shahriar Ahmed ,  Ravindra Soman ,  Anand Murthy ,  Mark Bohr

IPC分类号： H01L29/70

CPC分类号： H01L29/66287 ,  H01L29/42304 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

公开(公告)号：US06927140B2

公开(公告)日：2005-08-09

申请号：US10225586

申请日：2002-08-21

申请人： Ravindra Soman ,  Anand Murthy

发明人： Ravindra Soman ,  Anand Murthy

IPC分类号： H01L21/205 ,  H01L21/331 ,  H01L29/10 ,  H01L21/8222

CPC分类号： H01L29/1004 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66242

摘要： A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentration while maintaining manageability in controlling deposition of other materials in a substrate.

摘要翻译： 一种用于形成双极晶体管的基极的方法。 在反应室中使用硼掺杂气体的闪光形成窄碱以产生具有高硼浓度的窄碱。 该方法允许可靠地形成具有高硼浓度的碱，同时保持控制其它材料在衬底中沉积的可管理性。

公开(公告)号：US20050104160A1

公开(公告)日：2005-05-19

申请号：US10715971

申请日：2003-11-17

申请人： Shahriar Ahmed ,  Ravindra Soman ,  Anand Murthy ,  Mark Bohr

发明人： Shahriar Ahmed ,  Ravindra Soman ,  Anand Murthy ,  Mark Bohr

IPC分类号： H01L21/331 ,  H01L29/423 ,  H01L29/732 ,  H01L29/737 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/66287 ,  H01L29/42304 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

摘要翻译： 描述了双极晶体管及其制造。 通过在第一外延层上生长第二更重掺杂的外延层来形成非本征基区。 第二层在覆盖多晶硅发射器基座的下方延伸并与其绝缘。

公开(公告)号：US20050106792A1

公开(公告)日：2005-05-19

申请号：US10714139

申请日：2003-11-14

申请人： Stephen Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

发明人： Stephen Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

IPC分类号： H01L21/336 ,  H01L29/10

CPC分类号： H01L29/66636 ,  H01L29/1054 ,  H01L29/7842

摘要： Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

摘要翻译： 用于在器件的沟道区域中形成应变硅层的各种方法以及根据所公开的方法构造的器件。 在一个实施例中，形成应变诱导层，在应变诱导层上形成松弛层，去除应变诱导层的一部分，这使得应变诱导层松弛并使应变放松层。