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公开(公告)号:US20060161723A1
公开(公告)日:2006-07-20
申请号:US11036179
申请日:2005-01-14
Applicant: Angelo Sena , Agata Intini
Inventor: Angelo Sena , Agata Intini
CPC classification number: G06F12/0246 , Y10S707/99933 , Y10S707/99942 , Y10S707/99943
Abstract: A method controls write/erase operations in a memory device, such as a NAND flash memory. The method includes dividing the memory device in physical blocks, wherein each physical block is comprised of a number of pages; considering the memory device as comprising consecutive virtual blocks, each virtual block including consecutive sectors; associating to each virtual block a virtual block number; selecting the size of the virtual blocks equal to a multiple of the size of the physical blocks; and creating a virtual-to-physical mapping table having entries. Each entry in the mapping table stores a pointer to a root node of a tree structure that links logically a set of physical blocks in the memory device.
Abstract translation: 一种方法控制诸如NAND闪存之类的存储器件中的写/擦除操作。 该方法包括在物理块中划分存储器件,其中每个物理块由多页构成; 考虑到存储器件包括连续的虚拟块,每个虚拟块包括连续的扇区; 将每个虚拟块相关联的虚拟块号; 选择虚拟块的大小等于物理块的大小的倍数; 以及创建具有条目的虚拟到物理映射表。 映射表中的每个条目存储指向树结构的根节点的指针,该树结构在逻辑上链接存储器设备中的一组物理块。
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公开(公告)号:US07363421B2
公开(公告)日:2008-04-22
申请号:US11035013
申请日:2005-01-13
Applicant: Angelo Di Sena , Agata Intini
Inventor: Angelo Di Sena , Agata Intini
CPC classification number: G06F12/0246 , G06F2212/1036 , G06F2212/7211 , G11C16/102 , G11C16/349
Abstract: A method controls write/erase operations in a memory device including memory blocks that are exposed to wear as a result of repeated erasures. The method includes: storing the erase counts of the memory blocks, creating a chain storing the erase counts of the memory blocks that are available for writing at a certain instant of time, and selecting for writing, out of the blocks in the memory device available for writing, the block having the lowest erase count in the chain.
Abstract translation: 一种方法控制存储器件中的写/擦除操作,包括由于重复擦除而暴露于磨损的存储器块。 该方法包括:存储存储块的擦除计数,创建存储在特定时刻可用于写入的存储块的擦除计数的链,以及选择用于写入存储器装置中的块 对于写入,该块具有链中最低的擦除次数。
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公开(公告)号:US07457909B2
公开(公告)日:2008-11-25
申请号:US11036179
申请日:2005-01-14
Applicant: Angelo Di Sena , Agata Intini
Inventor: Angelo Di Sena , Agata Intini
IPC: G06F12/00
CPC classification number: G06F12/0246 , Y10S707/99933 , Y10S707/99942 , Y10S707/99943
Abstract: A method controls write/erase operations in a memory device, such as a NAND flash memory. The method includes dividing the memory device in physical blocks, wherein each physical block is comprised of a number of pages; considering the memory device as comprising consecutive virtual blocks, each virtual block including consecutive sectors; associating to each virtual block a virtual block number; selecting the size of the virtual blocks equal to a multiple of the size of the physical blocks; and creating a virtual-to-physical mapping table having entries. Each entry in the mapping table stores a pointer to a root node of a tree structure that links logically a set of physical blocks in the memory device.
Abstract translation: 一种方法控制诸如NAND闪存之类的存储器件中的写/擦除操作。 该方法包括在物理块中划分存储器件,其中每个物理块由多页构成; 考虑到存储器件包括连续的虚拟块,每个虚拟块包括连续的扇区; 将虚拟块号与每个虚拟块相关联; 选择虚拟块的大小等于物理块的大小的倍数; 以及创建具有条目的虚拟到物理映射表。 映射表中的每个条目存储指向树结构的根节点的指针,该树结构在逻辑上链接存储器设备中的一组物理块。
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公开(公告)号:US20060155917A1
公开(公告)日:2006-07-13
申请号:US11035013
申请日:2005-01-13
Applicant: Angelo Di Sena , Agata Intini
Inventor: Angelo Di Sena , Agata Intini
IPC: G06F12/00
CPC classification number: G06F12/0246 , G06F2212/1036 , G06F2212/7211 , G11C16/102 , G11C16/349
Abstract: A method controls write/erase operations in a memory device including memory blocks that are exposed to wear as a result of repeated erasures. The method includes: storing the erase counts of the memory blocks, creating a chain storing the erase counts of the memory blocks that are available for writing at a certain instant of time, and selecting for writing, out of the blocks in the memory device available for writing, the block having the lowest erase count in the chain.
Abstract translation: 一种方法控制存储器件中的写/擦除操作,包括由于重复擦除而暴露于磨损的存储器块。 该方法包括:存储存储块的擦除计数,创建存储在特定时刻可用于写入的存储块的擦除计数的链,以及选择用于写入存储器装置中的块 对于写入,该块具有链中最低的擦除次数。
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