公开(公告)号：US20220103169A1

公开(公告)日：2022-03-31

申请号：US17399760

申请日：2021-08-11

Applicant: Apple Inc.

Inventor： Aly Ismail ,  Amr Haggag

IPC: H03K17/30

Abstract: Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.

公开(公告)号：US11611338B2

公开(公告)日：2023-03-21

申请号：US17399760

申请日：2021-08-11

Applicant: Apple Inc.

Inventor： Aly Ismail ,  Amr Haggag

IPC: H03K17/30

Abstract: Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.