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公开(公告)号：US20200052158A1
公开(公告)日：2020-02-13
申请号：US16547166
申请日：2019-08-21
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
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公开(公告)号：US10923626B2
公开(公告)日：2021-02-16
申请号：US16547166
申请日：2019-08-21
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
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公开(公告)号：US10418519B2
公开(公告)日：2019-09-17
申请号：US15777169
申请日：2016-12-14
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
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