公开(公告)号：US20240379376A1

公开(公告)日：2024-11-14

申请号：US18314481

申请日：2023-05-09

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Yung-Chen Lin ,  Zhiyu Huang ,  Fenglin Wang ,  Chi-I Lang ,  Hoyung David Hwang ,  Edwin A. Arevalo ,  KyuHa Shim

IPC: H01L21/3115 ,  C23C14/48 ,  G03F7/004 ,  G03F7/09 ,  G03F7/11

Abstract: Disclosed herein are approaches for reducing EUV dose during formation of a patterned metal oxide photoresist. In one approach, a method may include providing a stack of layers atop a substrate, the stack of layers comprising a film layer, and implanting the film layer with ions. The method may further include depositing a metal oxide photoresist atop the film layer, and patterning the metal oxide photoresist.