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公开(公告)号：US20210090852A1
公开(公告)日：2021-03-25
申请号：US16580325
申请日：2019-09-24
Applicant: Applied Materials, Inc.
Inventor： Ofer YULI , Samer BANNA
Abstract: A semiconductor device is scanned by an electron beam of a scanning electron microscope (SEM). The area includes a three-dimensional (3D) feature having a top opening and a sidewall. The 3D feature is imaged while varying an energy value of the electron beam. The electron beam impinges at a first point within a selected area of the semiconductor device and interacts with the sidewall, wherein the first point is at a distance away from an edge of the top opening. Based on change in a signal representing secondary electron yield at the edge as the energy value of the electron beam is varied during the SEM imaging, it is determined whether the sidewall is occluded from a line-of-sight of the electron beam. A slope of the sidewall may be determined by comparing measured signals with simulated waveforms corresponding to various slopes.
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公开(公告)号：US20200373120A1
公开(公告)日：2020-11-26
申请号：US16421268
申请日：2019-05-23
Applicant: Applied Materials, Inc.
Inventor： Ofer YULI , Samer BANNA
Abstract: A plurality of energy filter values are obtained using a model that simulates potential distribution within a 3D feature when an electron beam of an SEM impinges on a selected area that includes the 3D feature. A correspondence is extracted between the plurality of energy filter values and respective depths of the 3D feature along a longitudinal direction by analyzing the simulated potential distribution. A plurality of SEM images of the 3D feature corresponding to the plurality of energy filter values are obtained. The plurality of SEM images are associated with their respective depths based on the extracted correspondence between the plurality of energy filter values and the respective depths. A composite 3D profile of the 3D feature is generated from the plurality of SEM images obtained from various depths of the 3D feature.
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