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公开(公告)号:US11145726B2
公开(公告)日:2021-10-12
申请号:US16654904
申请日:2019-10-16
Applicant: Applied Materials, Inc.
Inventor: Sushant Mittal , Ashish Pal , El Mehdi Bazizi , Angada Sachid
IPC: H01L29/417 , H01L29/66 , H01L29/78
Abstract: Semiconductor structures may include a substrate. The structures may include a gate structure overlying the substrate and formed in a first direction across the substrate. The structures may include a fin overlying the substrate and formed in a second direction across the substrate. The second direction may be orthogonal to the first direction, and the fin may intersect the gate structure. The structures may include a source/drain material formed about the fin. The structures may include a through-contact material extending vertically above the source/drain material. The structures may include a metal material extending vertically above the through-contact material. An interface between the metal material and the through-contact material may be characterized by a non-planar profile.
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公开(公告)号:US20210119002A1
公开(公告)日:2021-04-22
申请号:US16654904
申请日:2019-10-16
Applicant: Applied Materials, Inc.
Inventor: Sushant Mittal , Ashish Pal , El Mehdi Bazizi , Angada Sachid
IPC: H01L29/417 , H01L29/78 , H01L29/66
Abstract: Semiconductor structures may include a substrate. The structures may include a gate structure overlying the substrate and formed in a first direction across the substrate. The structures may include a fin overlying the substrate and formed in a second direction across the substrate. The second direction may be orthogonal to the first direction, and the fin may intersect the gate structure. The structures may include a source/drain material formed about the fin. The structures may include a through-contact material extending vertically above the source/drain material. The structures may include a metal material extending vertically above the through-contact material. An interface between the metal material and the through-contact material may be characterized by a non-planar profile.
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