Doped through-contact structures
    1.
    发明授权

    公开(公告)号:US11145726B2

    公开(公告)日:2021-10-12

    申请号:US16654904

    申请日:2019-10-16

    Abstract: Semiconductor structures may include a substrate. The structures may include a gate structure overlying the substrate and formed in a first direction across the substrate. The structures may include a fin overlying the substrate and formed in a second direction across the substrate. The second direction may be orthogonal to the first direction, and the fin may intersect the gate structure. The structures may include a source/drain material formed about the fin. The structures may include a through-contact material extending vertically above the source/drain material. The structures may include a metal material extending vertically above the through-contact material. An interface between the metal material and the through-contact material may be characterized by a non-planar profile.

    DOPED THROUGH-CONTACT STRUCTURES
    2.
    发明申请

    公开(公告)号:US20210119002A1

    公开(公告)日:2021-04-22

    申请号:US16654904

    申请日:2019-10-16

    Abstract: Semiconductor structures may include a substrate. The structures may include a gate structure overlying the substrate and formed in a first direction across the substrate. The structures may include a fin overlying the substrate and formed in a second direction across the substrate. The second direction may be orthogonal to the first direction, and the fin may intersect the gate structure. The structures may include a source/drain material formed about the fin. The structures may include a through-contact material extending vertically above the source/drain material. The structures may include a metal material extending vertically above the through-contact material. An interface between the metal material and the through-contact material may be characterized by a non-planar profile.

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