公开(公告)号：US11455715B2

公开(公告)日：2022-09-27

申请号：US17177119

申请日：2021-02-16

Applicant: Applied Materials Israel Ltd.

Inventor： Jitendra Pradipkumar Chaudhary ,  Roman Kris ,  Ran Alkoken ,  Sahar Levin ,  Chih-Chieh Chang ,  Einat Frishman

IPC: G06T7/12 ,  G06T7/00 ,  H01L29/66 ,  G06T7/13

Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.