公开(公告)号：US20240081038A1

公开(公告)日：2024-03-07

申请号：US17902798

申请日：2022-09-02

Applicant: Arm Limited

Inventor： Divya Madapusi Srinivas Prasad ,  David Victor Pietromonaco ,  Brian Tracy Cline ,  Mudit Bhargave

IPC: H01L27/108

CPC classification number: H01L27/108

Abstract: According to one implementation of the present disclosure, a circuit structure is configured to store charge in a charge-based storage element, where the charge-based storage element is disposed at least partially in a shallow-trench-isolation (STI) region of the circuit. According to one implementation of the present disclosure, a method includes: providing a circuit structure disposed on a substrate and a shallow-trench-isolation (STI) region of a circuit; forming an opening of the substrate and the STI region by removing a portion of the substrate and STI region; placing a first liner material in the opening and on remaining portions of the substrate and the STI region; and depositing a first metal layer in the opening on the first liner material.