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公开(公告)号:US20140246066A1
公开(公告)日:2014-09-04
申请号:US14274590
申请日:2014-05-09
IPC分类号: H01L35/32
摘要: An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.