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    SEMICONDUCTOR PROCESS
    1.
    发明申请
    SEMICONDUCTOR PROCESS 有权
    半导体工艺

    公开(公告)号：US20110244678A1

    公开(公告)日：2011-10-06

    申请号：US13161659

    申请日：2011-06-16

    申请人： Chang-Hsiao LEE ,  Shih-Fang Tzou ,  Ming-Da Hsieh ,  Yu-Tsung Lai ,  Jyh-Cherng Yau ,  Jiunn-Hsiung Liao

    发明人： Chang-Hsiao LEE ,  Shih-Fang Tzou ,  Ming-Da Hsieh ,  Yu-Tsung Lai ,  Jyh-Cherng Yau ,  Jiunn-Hsiung Liao

    IPC分类号： H01L21/283

    CPC分类号： C11D11/0047 ,  C11D7/08 ,  C11D7/3281 ,  H01L21/02063 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814

    摘要： A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water. The semiconductor process can reduce the possibility of having an incomplete turning on, a leakage or a short, so that the yield of the product is increased.

    摘要翻译： 提供半导体工艺。 首先，在基板上依次形成金属层，电介质层和图案化的硬掩模层。 此后，去除介电层的一部分以形成露出金属层的开口。 之后，使用清洁溶液清洁开口。 清洗液含有含量为0.00275〜3重量％的三唑化合物，含量为1〜10重量％的硫酸，含量为1〜200ppm的氢氟酸和水。 半导体工艺可以降低不完全打开，泄漏或短路的可能性，从而提高产品的产量。

    METHOD AND SYSTEM FOR PROCESSING SEMICONDUCTOR WAFER
    2.
    发明申请
    METHOD AND SYSTEM FOR PROCESSING SEMICONDUCTOR WAFER 审中-公开
    用于处理半导体波形的方法和系统

    公开(公告)号：US20120156885A1

    公开(公告)日：2012-06-21

    申请号：US12974714

    申请日：2010-12-21

    申请人： Chang-Hsiao LEE ,  Yu-Tsung Lai ,  Jiunn-Hsiung Liao

    发明人： Chang-Hsiao LEE ,  Yu-Tsung Lai ,  Jiunn-Hsiung Liao

    IPC分类号： H01L21/465

    CPC分类号： H01L21/02063 ,  H01L21/67207 ,  H01L21/76814

    摘要： In a method for processing a semiconductor wafer formed with a copper conductor, the semiconductor wafer is etched in an etching chamber to expose the copper conductor. The etched semiconductor wafer is transmitted from the etching chamber to a buffer zone, where a gas inert to the semiconductor wafer is introduced for a period of time. Then the semiconductor wafer is moved out of the buffer zone to a loading module. Nitrogen is one of the suitable options as the gas, and argon is another option.

    摘要翻译： 在用铜导体形成的半导体晶片的处理方法中，在蚀刻室中蚀刻半导体晶片以露出铜导体。 蚀刻的半导体晶片从蚀刻室传输到缓冲区，其中对半导体晶片惰性的气体被引入一段时间。 然后将半导体晶片从缓冲区移出到加载模块。 氮气是气体的合适选择之一，氩气是另一种选择。