公开(公告)号：US08064259B2

公开(公告)日：2011-11-22

申请号：US12617972

申请日：2009-11-13

申请人： Changhyun Lee ,  Jungdal Choi ,  Yoocheol Shin ,  Yongsik Yim

发明人： Changhyun Lee ,  Jungdal Choi ,  Yoocheol Shin ,  Yongsik Yim

IPC分类号： G11C11/34

CPC分类号： G11C16/0466

摘要： A nonvolatile memory device includes a word line group including a plurality of middle word lines and an edge word line having charge storage patterns on a substrate. A peripheral line is disposed on one side of the word line group so that the edge word line is between the peripheral word line and the middle word lines. The peripheral line includes an insulating layer and a gate electrode. Charge storage patterns of the middle and edge word lines are separated from each other, and a charge storage pattern of the edge word line extends on one side to be connected to the insulating layer of the peripheral line. Methods of forming nonvolatile memory devices are also disclosed.

摘要翻译： 非易失性存储器件包括一个包括多个中间字线的字线组和在衬底上具有电荷存储图案的边缘字线。 外围线设置在字线组的一侧，使得边缘字线在周边字线和中间字线之间。 外围线包括绝缘层和栅电极。 中间和边缘字线的电荷存储模式彼此分离，并且边缘字线的电荷存储模式在一侧延伸以连接到外围线的绝缘层。 还公开了形成非易失性存储器件的方法。

公开(公告)号：US20100128531A1

公开(公告)日：2010-05-27

申请号：US12617972

申请日：2009-11-13

申请人： Changhyun Lee ,  Jungdal Choi ,  Yoocheol Shin ,  Yongsik Yim

发明人： Changhyun Lee ,  Jungdal Choi ,  Yoocheol Shin ,  Yongsik Yim

IPC分类号： G11C16/04 ,  G11C11/34

CPC分类号： G11C16/0466

摘要： A nonvolatile memory device includes a word line group including a plurality of middle word lines and an edge word line having charge storage patterns on a substrate. A peripheral line is disposed on one side of the word line group so that the edge word line is between the peripheral word line and the middle word lines. The peripheral line includes an insulating layer and a gate electrode. Charge storage patterns of the middle and edge word lines are separated from each other, and a charge storage pattern of the edge word line extends on one side to be connected to the insulating layer of the peripheral line. Methods of forming nonvolatile memory devices are also disclosed.

摘要翻译： 非易失性存储器件包括一个包括多个中间字线的字线组和在衬底上具有电荷存储图案的边缘字线。 外围线设置在字线组的一侧，使得边缘字线在周边字线和中间字线之间。 外围线包括绝缘层和栅电极。 中间和边缘字线的电荷存储模式彼此分离，并且边缘字线的电荷存储模式在一侧延伸以连接到外围线的绝缘层。 还公开了形成非易失性存储器件的方法。

公开(公告)号：US20140145137A1

公开(公告)日：2014-05-29

申请号：US14090803

申请日：2013-11-26

申请人： Hyunsu Ju ,  Eunmi Kim ,  Yoocheol Shin ,  Min Kyu Yang ,  Jungdal Choi

发明人： Hyunsu Ju ,  Eunmi Kim ,  Yoocheol Shin ,  Min Kyu Yang ,  Jungdal Choi

IPC分类号： H01L45/00

CPC分类号： H01L45/08 ,  H01L27/2454 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146

摘要： Resistive memory devices are provided having a gate stack including insulating layers and gates stacked on a substrate in a vertical direction, a channel penetrating the gate stack in the vertical direction to be electrically connected to the substrate, a gate insulating layer provided between the channel and the gates, and a variable resistance layer disposed along an extending direction of the channel. The gate stack may include an alcove formed by recessing the gate in a horizontal direction. The variable resistance layer may extend toward the alcove in the horizontal direction and be overlapped with at least one of the gates in the horizontal direction. Related methods are also provided.

摘要翻译： 提供电阻式存储器件，其具有包括垂直方向上堆叠在基板上的绝缘层和栅极的栅极堆叠，在垂直方向上穿过栅极堆叠的沟道以电连接到衬底;栅极绝缘层，设置在沟道和 栅极和沿通道的延伸方向设置的可变电阻层。 栅极堆叠可以包括通过在水平方向上使栅极凹陷而形成的凹室。 可变电阻层可以在水平方向上朝向凹室延伸，并且在水平方向上与至少一个栅极重叠。 还提供了相关方法。

公开(公告)号：US09059395B2

公开(公告)日：2015-06-16

申请号：US14090803

申请日：2013-11-26

申请人： Hyunsu Ju ,  Eunmi Kim ,  Yoocheol Shin ,  Min Kyu Yang ,  Jungdal Choi

发明人： Hyunsu Ju ,  Eunmi Kim ,  Yoocheol Shin ,  Min Kyu Yang ,  Jungdal Choi

IPC分类号： H01L29/02 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L45/08 ,  H01L27/2454 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146

摘要： Resistive memory devices are provided having a gate stack including insulating layers and gates stacked on a substrate in a vertical direction, a channel penetrating the gate stack in the vertical direction to be electrically connected to the substrate, a gate insulating layer provided between the channel and the gates, and a variable resistance layer disposed along an extending direction of the channel. The gate stack may include an alcove formed by recessing the gate in a horizontal direction. The variable resistance layer may extend toward the alcove in the horizontal direction and be overlapped with at least one of the gates in the horizontal direction. Related methods are also provided.

摘要翻译： 提供电阻式存储器件，其具有包括垂直方向上堆叠在基板上的绝缘层和栅极的栅极堆叠，在垂直方向上穿过栅极堆叠的沟道以电连接到衬底;栅极绝缘层，设置在沟道和 栅极和沿通道的延伸方向设置的可变电阻层。 栅极堆叠可以包括通过在水平方向上使栅极凹陷而形成的凹室。 可变电阻层可以在水平方向上朝向凹室延伸，并且在水平方向上与至少一个栅极重叠。 还提供了相关方法。

公开(公告)号：US09224493B2

公开(公告)日：2015-12-29

申请号：US14280920

申请日：2014-05-19

申请人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

发明人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

IPC分类号： G11C16/26 ,  G11C16/30 ,  G11C16/34 ,  G11C8/10 ,  G11C11/56 ,  G11C16/04 ,  G11C29/00

CPC分类号： G11C16/26 ,  G11C8/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00

摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.

摘要翻译： 非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。 非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线 以及当执行编程操作时，对未选字线的取消选择读取电压。 电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上 当执行读操作时，字线和与选择字线相邻的下字线。

公开(公告)号：US08059466B2

公开(公告)日：2011-11-15

申请号：US12656083

申请日：2010-01-15

申请人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

发明人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

IPC分类号： G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5642

摘要： Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage.

摘要翻译： 提供了一种非易失性存储器系统及其编程方法。 非易失性存储器系统的编程方法包括：参考要写入被配置为为所选存储器单元提供干扰的干扰单元的程序数据来调整所选存储器单元的编程验证电压，并根据 调整后的程序验证电压。

公开(公告)号：US08737129B2

公开(公告)日：2014-05-27

申请号：US13355834

申请日：2012-01-23

申请人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

发明人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

IPC分类号： G11C16/10 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56

CPC分类号： G11C16/26 ,  G11C8/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00

摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.

摘要翻译： 非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。 非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线 以及当执行编程操作时，对未选字线的取消选择读取电压。 电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上 当执行读操作时，字线和与选择字线相邻的下字线。

公开(公告)号：US09564237B2

公开(公告)日：2017-02-07

申请号：US14946848

申请日：2015-11-20

申请人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

发明人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

IPC分类号： G11C16/04 ,  G11C16/26 ,  G11C16/30 ,  G11C8/10 ,  G11C11/56 ,  G11C16/10 ,  G11C16/34 ,  G11C29/00

CPC分类号： G11C16/26 ,  G11C8/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00

摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.

摘要翻译： 非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。 非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线 以及当执行编程操作时，对未选字线的取消选择读取电压。 电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上 当执行读操作时，字线和与选择字线相邻的下字线。

公开(公告)号：US20160078955A1

公开(公告)日：2016-03-17

申请号：US14946848

申请日：2015-11-20

申请人： Changhyun Lee ,  Jungdal Choi ,  Byeong-ln Choe

发明人： Changhyun Lee ,  Jungdal Choi ,  Byeong-ln Choe

IPC分类号： G11C16/26 ,  G11C16/34 ,  G11C16/10

CPC分类号： G11C16/26 ,  G11C8/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00

摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.

摘要翻译： 非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。 非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线 以及当执行编程操作时，对未选字线的取消选择读取电压。 电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上 当执行读操作时，字线和与选择字线相邻的下字线。

公开(公告)号：US20120120732A1

公开(公告)日：2012-05-17

申请号：US13355834

申请日：2012-01-23

申请人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

发明人： Changhyun Lee ,  Jungdal Choi ,  Byeong-In Choe

IPC分类号： G11C16/10 ,  G11C16/26

CPC分类号： G11C16/26 ,  G11C8/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00

摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.

摘要翻译： 非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。 非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线 以及当执行编程操作时，对未选字线的取消选择读取电压。 电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上 当执行读操作时，字线和与选择字线相邻的下字线。