公开(公告)号：US6088604A

公开(公告)日：2000-07-11

申请号：US375445

申请日：1995-01-19

申请人： David Arfon Williams ,  Adrian Michael Marsh ,  Haroon Ahmed ,  Bruce William Alphenaar

发明人： David Arfon Williams ,  Adrian Michael Marsh ,  Haroon Ahmed ,  Bruce William Alphenaar

IPC分类号： H01L29/43 ,  B32B12/00 ,  H01B12/00 ,  H01L39/00

CPC分类号： H01L29/437

摘要： A superconductor-normal conductor junction device comprises first and second regions (1, 3) of normal material forming first and second junctions with a superconducting material (2), the Fermi level of the first region of normal material being so arranged relative to a given energy level in the superconducting material that charge carriers in the first normal material undergo Andreev reflection at the first junction, resulting in pairs of the charge carriers entering said given energy level in the superconducting material, and the Fermi level of the second region of normal material being so arranged relative to said given level in the superconducting material that said charge carriers conduct from the superconducting material through the second region.

摘要翻译： 超导体正常导体连接装置包括正常材料的第一和第二区域（1,3），其形成具有超导材料（2）的第一和第二结，正常材料的第一区域的费米能级相对于给定的 在第一正常材料中对载流子进行充电的超导材料中的能量级在第一接头处经历安德列夫反射，导致在超导材料中进入所述给定能级的电荷载体对，以及正常材料的第二区域的费米能级 在超导材料中相对于所述给定的水平布置，所述电荷载体从超导材料通过第二区域传导。