公开(公告)号：US20200156932A1

公开(公告)日：2020-05-21

申请号：US16773042

申请日：2020-01-27

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： Arlynn W. SMITH ,  Dan CHILCOTT

IPC: B81C1/00 ,  C03C27/04 ,  B81B7/00 ,  B32B37/18 ,  B32B37/12 ,  B32B17/06 ,  B32B9/04 ,  B32B7/12 ,  B32B3/30 ,  G02B23/12 ,  B81C3/00

Abstract: A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

公开(公告)号：US20250166954A1

公开(公告)日：2025-05-22

申请号：US19034774

申请日：2025-01-23

Applicant: Elbit Systems of America, LLC

Inventor： Stephen W. CARROLL ,  Arlynn W. SMITH ,  Todd A. SMITH

IPC: H01J31/50 ,  G02B23/12 ,  H01J9/12

Abstract: A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.