公开(公告)号：US09438199B2

公开(公告)日：2016-09-06

申请号：US14478295

申请日：2014-09-05

申请人： Electronics and Telecommunications Research Institute

发明人： Dong Min Kang ,  Seong Il Kim ,  Sang Heung Lee ,  Chull Won Ju ,  Ho Kyun Ahn ,  Hyung Sup Yoon ,  Jong Won Lim

IPC分类号： H03H7/38 ,  H01L23/64 ,  H01P5/12 ,  H01P1/203 ,  H05K1/02

CPC分类号： H03H7/38 ,  H01L23/642 ,  H01L2224/49175 ,  H01P1/2039 ,  H01P5/12 ,  H05K1/025 ,  H05K2201/09781

摘要： Provided herein is a component package including a matching unit and a matching method thereof, the matching unit including: a substrate; a transmission line formed on the substrate, the transmission line being connected to a terminal of the component package; a bonding wire electrically connecting the transmission line and a central component; and a capacitor unit having a plurality of capacitors electrically connected with the transmission line by wiring connection, wherein an inductance of the matching unit is variable by adjusting a length of the bonding wire, and a capacitance of the matching unit is variable by increasing or reducing the number of capacitors electrically connected to the transmission line, of among the capacitors inside the capacitor unit, by extending or cutting off the wiring connection.

摘要翻译： 本文提供了一种包括匹配单元及其匹配方法的组件封装，所述匹配单元包括：衬底; 形成在所述基板上的传输线，所述传输线连接到所述部件封装的端子; 电连接所述传输线和中心部件的接合线; 以及具有通过布线连接与传输线电连接的多个电容器的电容器单元，其中匹配单元的电感通过调整接合线的长度而变化，并且匹配单元的电容可通过增加或减小而变化 通过延长或切断布线连接，在电容器单元内的电容器之间电连接到传输线的电容器的数量。

公开(公告)号：US09899226B2

公开(公告)日：2018-02-20

申请号：US14658121

申请日：2015-03-13

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Ho Kyun Ahn ,  Hae Cheon Kim ,  Jong Won Lim ,  Dong Min Kang ,  Yong Hwan Kwon ,  Seong Il Kim ,  Zin Sig Kim ,  Eun Soo Nam ,  Byoung Gue Min ,  Hyung Sup Yoon ,  Kyung Ho Lee ,  Jong Min Lee ,  Kyu Jun Cho

IPC分类号： H01L29/40 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/51 ,  H01L29/20 ,  H01L29/45

CPC分类号： H01L21/28264 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

摘要： Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

公开(公告)号：US10134854B2

公开(公告)日：2018-11-20

申请号：US15248676

申请日：2016-08-26

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Ho Kyun Ahn ,  Dong Min Kang ,  Yong-Hwan Kwon ,  Dong-Young Kim ,  Seong Il Kim ,  Hae Cheon Kim ,  Eun Soo Nam ,  Jae Won Do ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Sang-Heung Lee ,  Jong Min Lee ,  Jong-Won Lim ,  Hyun Wook Jung ,  Kyu Jun Cho

IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

摘要： A high electron mobility transistor includes a substrate including a first surface and a second surface facing each other and having a via hole passing through the first surface and the second surface, an active layer on the first surface, a cap layer on the active layer and including a gate recess region exposing a portion of the active layer, a source electrode and a drain electrode on one of the cap layer and the active layer, an insulating layer on the source electrode and the drain electrode and having on opening corresponding to the gate recess region to expose the gate recess region, a first field electrode on the insulating layer, a gate electrode electrically connected to the first field electrode on the insulating layer, and a second field electrode on the second surface and contacting the active layer through the via hole.

公开(公告)号：US09537458B2

公开(公告)日：2017-01-03

申请号：US14666163

申请日：2015-03-23

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Sang Heung Lee ,  Dong Min Kang ,  Seong Il Kim ,  Ho Kyun Ahn ,  Hyung Sup Yoon ,  Jong Won Lim ,  Chull Won Ju

IPC分类号： H03F3/08 ,  H03G1/00 ,  H03F1/08 ,  H03G3/12

CPC分类号： H03G1/0088 ,  H03F1/083 ,  H03F3/08 ,  H03F2200/153 ,  H03G3/12

摘要： Provided herein is a feedback amplifier including an amplifier circuit configured to amplify an input signal input from an input terminal and output the amplified input signal to an output terminal; a feedback circuit configured to apply a feedback resistance value to a signal output to the output terminal, and to control a gain of the amplifier circuit by adjusting the input signal by a bias voltage applied with a feedback resistance value determined; a packet signal sensor configured to generate a fixed resistance control signal for controlling a fixed resistance value included in the feedback resistance value through a comparison between the output from the output terminal with a minimum signal level; and a fixed resistance controller configured to control the fixed resistance value included in the feedback resistance value in response to the fixed resistance control signal.

摘要翻译： 本文提供了一种反馈放大器，包括：放大器电路，被配置为放大从输入端输入的输入信号，并将放大的输入信号输出到输出端; 反馈电路，被配置为向输出端子输出的信号施加反馈电阻值，并且通过利用所确定的反馈电阻值施加的偏置电压来调节所述输入信号来控制所述放大器电路的增益; 分组信号传感器，被配置为通过比较来自所述输出端子的输出与最小信号电平之间的比较，产生用于控制所述反馈电阻值中包括的固定电阻值的固定电阻控制信号; 以及固定电阻控制器，其被配置为响应于所述固定电阻控制信号来控制包括在所述反馈电阻值中的所述固定电阻值。

公开(公告)号：US09166011B2

公开(公告)日：2015-10-20

申请号：US14328247

申请日：2014-07-10

申请人： Electronics and Telecommunications Research Institute

发明人： Seong Il Kim ,  Dong Min Kang ,  Sang Heung Lee ,  Ho Kyun Ahn ,  Hyung Sup Yoon ,  Byoung Gue Min ,  Jong Won Lim

IPC分类号： H01L21/338 ,  H01L29/423 ,  H01L29/778 ,  H01L21/283 ,  H01L21/28

CPC分类号： H01L29/42312 ,  H01L21/28114 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/42316 ,  H01L29/66863 ,  H01L29/778 ,  H01L29/812

摘要： Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 μm or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device.

摘要翻译： 公开了一种具有稳定的栅极结构的半导体器件及其制造方法，其中通过在栅极头的宽度方向上的栅极头附近还包括多个栅极脚来稳定栅极结构，以作为支撑体 在包括具有0.2μm或更小的长度的精细栅极脚的栅极结构中，并且栅极头具有预定尺寸。 因此，可以防止半导体器件的栅电极塌陷，并且在半导体器件的处理期间或之后提高半导体器件的可靠性。