公开(公告)号：US11899334B2

公开(公告)日：2024-02-13

申请号：US17545063

申请日：2021-12-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sanghwa Yoo ,  Sooyeon Kim ,  Heuk Park ,  Jyung Chan Lee ,  Joon Ki Lee

IPC: G02F1/225 ,  G02F1/01

CPC classification number: G02F1/2257 ,  G02F1/0123 ,  G02F2202/105

Abstract: A silicon photonics-based optical modulator is disclosed. The optical modulator includes first radio frequency (RF) metal electrodes that operate as a ground, phase shifters disposed between the first RF metal electrodes for optically modulating an optical signal transmitted along an optical waveguide, second RF metal electrodes disposed between the phase shifters for providing an RF electrical signal received from a driving driver located outside of the optical modulator through one end, resistor-inductors (RL) connected to another end of the second RF metal electrodes, an inductive line disposed between the RLs and a power supply for applying a bias voltage to the optical modulator and the driving driver, and a silicon capacitor disposed between the RLs and the power supply for preventing a degradation of an RF response characteristic of the silicon photonics-based optical modulator caused by the inductive line.