Bumped semiconductor device and method for probing the same
    3.
    发明授权
    Bumped semiconductor device and method for probing the same 失效
    用于探测的半导体器件和方法

    公开(公告)号:US5554940A

    公开(公告)日:1996-09-10

    申请号:US270880

    申请日:1994-07-05

    申请人: Eric M. Hubacher

    发明人: Eric M. Hubacher

    摘要: Probing array bumped semiconductor devices using cantilever probe needles is facilitated by the formation of peripheral test pads. A semiconductor die (10) includes bond pads (12). A redistribution metallization layer is deposited and patterned to form individual redistribution structures (26) associated with and electrically coupled to each bond pad. Each redistribution structure includes a test pad (28), a bump pad (30) and a bump pad interconnect (32). The test pads are formed in positions close to those of the underlying bond pads, while the bump pads can be formed anywhere within the die. Having the test pads located similarly to the bond pads enables the same or a similar probe card apparatus and cantilever needles (50) to probe the die either at the bond pads for devices which are to be wire bonded or TAB bonded, or at the test pads for devices which are to be bumped.

    摘要翻译: 通过外围测试焊盘的形成,便于利用悬臂探针探测阵列凸起的半导体器件。 半导体管芯(10)包括接合焊盘(12)。 重新分布金属化层被沉积并图案化以形成与每个接合焊盘相关联并电耦合到每个接合焊盘的单独再分配结构(26)。 每个再分布结构包括测试焊盘(28),凸块焊盘(30)和凸块焊盘互连(32)。 测试焊盘形成在接近底层接合焊盘的位置,而焊盘可以在模具内的任何位置形成。 使测试垫与接合垫类似,使得相同或相似的探针卡装置和悬臂针(50)可以在用于要接线或TAB键合的装置的接合垫处或在测试中探测模具 将被撞击的装置的垫片。

    High density wafer contacting and test system
    4.
    发明授权
    High density wafer contacting and test system 失效
    高密度波浪接触和测试系统

    公开(公告)号:US4038599A

    公开(公告)日:1977-07-26

    申请号:US537514

    申请日:1974-12-30

    摘要: A contactor structure employed in a high speed electronic test system for testing the electrical integrity of the conductive paths (or lines) in the packaging substrate prior to the mounting and connection thereto of the high circuit density monolithic devices. The contactor structure includes a semiconductor space transformer fabricated by large scale integration techniques and containing a plurality of discrete first integrated circuits. The first integrated circuits of the space transformer being respectively electrically connected to said electrical probes. Second integrated circuitry interconnecting said first integrated circuits is also contained within said semiconductor space transformer. Under control of said test system said second integrated circuitry selectively energizes, selected first and second ones of said first integrated circuits. Each of said first integrated circuits contains circuitry, whereby said selected first and second ones of said first circuits will manifest the electrical integrity of the electrical path there between.

    Method of forming conductive bumps on a semiconductor device using a
double mask structure
    5.
    发明授权
    Method of forming conductive bumps on a semiconductor device using a double mask structure 失效
    使用双掩模结构在半导体器件上形成导电凸块的方法

    公开(公告)号:US5536677A

    公开(公告)日:1996-07-16

    申请号:US348009

    申请日:1994-12-01

    申请人: Eric M. Hubacher

    发明人: Eric M. Hubacher

    摘要: A method for forming conductive bumps (60, 62) on a semiconductor device (50) using a mask structure (20) employs two masks (22, 24) individually fabricated and positioned in a back-to-back relationship. Each mask is patterned and isotropically etched to form a plurality of tapered openings (30, 40) corresponding to a pattern of terminal pads (54) on the semiconductor device. Metal is evaporated through the openings and onto the terminal pads. The mask structure is removed and the remaining metal is reflowed to form the conductive bumps. Using a mask structure having two individual masks (each with a thickness of one-half a typical mask thickness) enables smaller openings to be etched in each mask. Upon joining the two masks, the effective aspect ratio of the mask structure is reduced to produce smaller and denser conductive bumps without loss of volume and height control.

    摘要翻译: 使用掩模结构(20)在半导体器件(50)上形成导电凸块(60,62)的方法使用分别制造并以背靠背关系定位的两个掩模(22,24)。 对每个掩模进行图案化和各向同性蚀刻以形成对应于半导体器件上的端子焊盘(54)的图案的多个锥形开口(30,40)。 通过开口将金属蒸发到端子焊盘上。 去除掩模结构并且剩余的金属回流以形成导电凸块。 使用具有两个单独掩模(每个具有典型掩模厚度的二分之二的厚度)的掩模结构能够在每个掩模中蚀刻更小的开口。 在连接两个掩模时,掩模结构的有效长宽比被减小以产生更小且更致密的导电凸块,而不会损失体积和高度控制。