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    Method and apparatus for reduced wear polishing pad conditioning
    1.
    发明申请
    Method and apparatus for reduced wear polishing pad conditioning 失效
    降低磨损抛光垫调理的方法和装置

    公开(公告)号：US20060046623A1

    公开(公告)日：2006-03-02

    申请号：US11209167

    申请日：2005-08-22

    申请人： Yan Wang ,  Stan Tsai ,  Yongqi Hu ,  Feng Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Tran ,  Martin Wohlert ,  Renhe Jia ,  Yuan Tian

    发明人： Yan Wang ,  Stan Tsai ,  Yongqi Hu ,  Feng Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Tran ,  Martin Wohlert ,  Renhe Jia ,  Yuan Tian

    IPC分类号： B24B1/00

    CPC分类号： B24B53/017 ,  B23H5/08

    摘要： Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

    摘要翻译： 提供了用于原位调理和/或清洁CMP，ECMP或其它处理系统的处理垫的调节头的实施例。 在一个实施例中，调节头包括设置在中心腔中的刷子。 清洁流体通过调节头的中心空腔设置到处理垫。 刷子旋转并横向移动到处理垫的表面上。 通过调节头分配的清洁溶液溶解处理操作的副产物，同时刷子轻轻地擦拭处理垫。 调节头的唇缘保持清洁流体和清洁废物，从而最小化调节头外部区域的污染。 清洁废物通过在调节头的外周附近形成的通道从处理垫移除。

    Method and composition for polishing a substrate
    2.
    发明申请
    Method and composition for polishing a substrate 审中-公开
    抛光基材的方法和组合物

    公开(公告)号：US20060021974A1

    公开(公告)日：2006-02-02

    申请号：US10948958

    申请日：2004-09-24

    申请人： Feng Liu ,  Stan Tsai ,  Martin Wohlert ,  Yuan Tian ,  Renhe Jia ,  Yongqi Hu ,  Liang-Yuh Chen

    发明人： Feng Liu ,  Stan Tsai ,  Martin Wohlert ,  Yuan Tian ,  Renhe Jia ,  Yongqi Hu ,  Liang-Yuh Chen

    IPC分类号： C03C15/00 ,  C09K13/00

    CPC分类号： H01L21/7684 ,  C25F3/16 ,  C25F3/26 ,  H01L21/32125

    摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including sulfuric acid or derivative, phosphoric acid or derivative, a first chelating agent including an organic salt, a pH adjusting agent to provide a pH between about 2 and about 10 and a solvent. The composition may further include a second chelating agent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.

    摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供一种组合物，用于从包括硫酸或衍生物，磷酸或衍生物的底物表面至少去除导电材料，包括有机盐的第一螯合剂，pH调节剂以提供约2 约10和溶剂。 组合物还可以包括第二螯合剂。 组合物可以用于单步或两步电化学机械平面化工艺。 本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。

    PROCESS AND COMPOSITION FOR PASSIVATING A SUBSTRATE DURING ELECTROCHEMICAL MECHANICAL POLISHING
    3.
    发明申请
    PROCESS AND COMPOSITION FOR PASSIVATING A SUBSTRATE DURING ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
    电化学机械抛光过程中用于剥离基材的方法和组合

    公开(公告)号：US20070144915A1

    公开(公告)日：2007-06-28

    申请号：US11613918

    申请日：2006-12-20

    申请人： Yuan Tian ,  Renhe Jia ,  Feng Liu ,  Yongqi Hu ,  Stan Tsai ,  Liang-Yuh Chen ,  Robert Ewald

    发明人： Yuan Tian ,  Renhe Jia ,  Feng Liu ,  Yongqi Hu ,  Stan Tsai ,  Liang-Yuh Chen ,  Robert Ewald

    IPC分类号： B23H7/00 ,  H05K3/07

    CPC分类号： C25F3/02 ,  B23H5/08 ,  H01L21/32125

    摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a method of electrochemically processing a substrate using a conductive polishing article is provided. The method includes disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising a cathode coupled to the conductive polishing article and an anode, wherein the substrate is in electrical contact with the anode, supplying a polishing composition comprising a cathodic inhibitor and an anodic inhibitor, forming a protective film on the cathode to prevent corrosion of the cathode, and polishing the substrate. In another embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes a corrosion inhibitor selected from the group of an amino acid based inhibitor, a polymeric based corrosion inhibitor, an oxidizer, a chelating inhibitor or combinations thereof.

    摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施例中，提供了使用导电抛光制品电化学处理衬底的方法。 该方法包括将包括形成在其上的导电材料层的衬底放置在包括耦合到导电抛光制品的阴极和阳极的处理装置中，其中衬底与阳极电接触，提供包含阴极抑制剂的抛光组合物， 阳极抑制剂，在阴极上形成保护膜以防止阴极腐蚀，并抛光衬底。 在另一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括选自氨基酸基抑制剂，聚合物基腐蚀抑制剂，氧化剂，螯合抑制剂或组合的腐蚀抑制剂 其中。

    Metal CMP process on one or more polishing stations using slurries with oxidizers
    4.
    发明申请
    Metal CMP process on one or more polishing stations using slurries with oxidizers 审中-公开
    使用具有氧化剂的浆料在一个或多个抛光站上进行金属CMP处理

    公开(公告)号：US20060219663A1

    公开(公告)日：2006-10-05

    申请号：US11338146

    申请日：2006-01-23

    申请人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

    发明人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

    摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

    摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

    Conductive pad with high abrasion
    6.
    发明申请
    Conductive pad with high abrasion 审中-公开
    高耐磨导电垫

    公开(公告)号：US20050194681A1

    公开(公告)日：2005-09-08

    申请号：US11066599

    申请日：2005-02-25

    申请人： Yongqi Hu ,  Stan Tsai ,  Martin Wohlert ,  Feng Liu ,  Liang-Yuh Chen

    发明人： Yongqi Hu ,  Stan Tsai ,  Martin Wohlert ,  Feng Liu ,  Liang-Yuh Chen

    IPC分类号： H01L23/48

    CPC分类号： B24B37/22 ,  B23H5/08 ,  H01L21/67155

    摘要： A method and apparatus for a planarizing or polishing article for Electrochemical Mechanical Planarization (ECMP) is disclosed. The polishing article is a pad assembly having a plurality of conductive domains and a plurality of abrasive domains on a processing surface. The abrasive domains and the conductive domains comprise a plurality of contact elements that are adapted to bias a semiconductor substrate while also providing abrasive qualities to enhance removal of material deposited on the substrate.

    摘要翻译： 公开了一种用于电化学机械平面化（ECMP）的平面化或抛光制品的方法和装置。 抛光制品是在处理表面上具有多个导电区域和多个磨料区域的垫组件。 研磨区域和导电区域包括适于偏置半导体衬底的多个接触元件，同时还提供磨料质量以增强沉积在衬底上的材料的去除。

    Endpoint for electrochemical processing
    8.
    发明申请
    Endpoint for electrochemical processing 审中-公开
    电化学处理终点

    公开(公告)号：US20050077188A1

    公开(公告)日：2005-04-14

    申请号：US10940603

    申请日：2004-09-14

    申请人： Daxin Mao ,  Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Feng Liu ,  Vladimir Galburt ,  Sen Ko ,  Stan Tsai ,  Liang-Yuh Chen

    发明人： Daxin Mao ,  Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Feng Liu ,  Vladimir Galburt ,  Sen Ko ,  Stan Tsai ,  Liang-Yuh Chen

    IPC分类号： B23H5/08 ,  B24B37/013 ,  B24B49/04 ,  B24B49/10 ,  C25F7/00 ,  H01L21/304 ,  H01L21/3063 ,  C25F3/00

    CPC分类号： B24B37/013 ,  B23H5/08 ,  B24B49/04 ,  B24B49/10

    摘要： A method and apparatus for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station, detecting an endpoint of the first electrochemical processing step at or just prior to breakthrough of the exposed layer of barrier material, electrochemically processing the exposed layer of barrier material in a second electrochemical processing step in the barrier processing station, and detecting an endpoint of the second electrochemical processing step.

    摘要翻译： 提供了一种用于电化学处理衬底的方法和设备。 在一个实施例中，用于电化学处理衬底的方法包括以下步骤：在基底上的暴露的阻挡材料层与电极之间建立通过电解质的导电路径，在第一次电化学过程中电化学去除暴露层的一部分 在屏障处理站中的处理步骤，在暴露的阻挡材料层的穿透之前或之前检测第一电化学处理步骤的端点，在屏障处理站中的第二电化学处理步骤中电化学处理阻挡材料的暴露层 并且检测第二电化学处理步骤的端点。