公开(公告)号：US10818570B1

公开(公告)日：2020-10-27

申请号：US16413613

申请日：2019-05-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Luke England ,  Daniel George Berger

IPC: H01L23/34 ,  H01L23/367 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H01L27/06

Abstract: A stacked semiconductor device is provided, which includes a first die, a second die and a heat dissipating layer. The first die has a pre-determined size. The second die is bonded to the first die using a dielectric material, wherein the second die is smaller than the first die. The heat dissipating layer is surrounding the second die, wherein the heat dissipating layer has an outer dimension that is equal to the size of the first die.