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公开(公告)号：US20200051867A1
公开(公告)日：2020-02-13
申请号：US16058494
申请日：2018-08-08
Applicant: GLOBALFOUNDRIES INC.
Inventor： Fuad H. AL-AMOODY , Yiheng XU , Rishikesh KRISHNAN
IPC: H01L21/8234
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to fin structures and methods of manufacture. The structure includes: a plurality of fin structures formed of substrate material; a semiconductor material located between selected fin structures of the plurality of fin structures; and isolation regions within spaces between the plurality of fin structures.
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