公开(公告)号：US10438894B1

公开(公告)日：2019-10-08

申请号：US15993523

申请日：2018-05-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mukta Farooq ,  Koushik Ramachandran ,  Eric Perfecto ,  Ian Melville

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00

Abstract: A multi-chip semiconductor device with multi-level structure including a substrate with a top substrate surface, a cavity with a depth in the substrate, a first chip having a top first chip surface with a first chip height, optionally including a second chip having a top second chip surface with a second chip height, and a connecting passive chip bridging the first chip, the second chip and the substrate by solder bumps wherein the solder bumps enable the connecting passive chip to be level.