公开(公告)号：US20170338345A1

公开(公告)日：2017-11-23

申请号：US15160099

申请日：2016-05-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alexander REZNICEK ,  Shogo MOCHIZUKI ,  Veeraraghavan S. BASKER ,  Nicolas L. BREIL ,  Oleg GLUSCHENKOV

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785

Abstract: Fabrication method for a semiconductor device and structure are provided, which includes: providing an isolation layer at least partially disposed adjacent to at least one sidewall of a fin structure extended above a substrate structure, the fin structure including a channel region; recessing an exposed portion of the fin structure to define a residual stress to be induced into the channel region of the fin structure, wherein upper surfaces of a recessed fin portion and the isolation layer are coplanar with each other; and epitaxially growing a semiconductor material from the recessed exposed portion of the fin structure to form at least one of a source region and a drain region of the semiconductor device.

公开(公告)号：US20180175197A1

公开(公告)日：2018-06-21

申请号：US15884045

申请日：2018-01-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alexander REZNICEK ,  Shogo MOCHIZUKI ,  Veeraraghavan S. BASKER ,  Nicolas L. BREIL ,  Oleg GLUSCHENKOV

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785

Abstract: Fabrication method for a semiconductor device and structure are provided, which includes: providing an isolation layer at least partially disposed adjacent to at least one sidewall of a fin structure extended above a substrate structure, the fin structure including a channel region; recessing an exposed portion of the fin structure to define a residual stress to be induced into the channel region of the fin structure, wherein upper surfaces of a recessed fin portion and the isolation layer are coplanar with each other; and epitaxially growing a semiconductor material from the recessed exposed portion of the fin structure to form at least one of a source region and a drain region of the semiconductor device.