公开(公告)号：US20210005605A1

公开(公告)日：2021-01-07

申请号：US16503982

申请日：2019-07-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wenjun LI ,  Brian J. GREENE ,  Tao CHU ,  Bingwu LIU

IPC: H01L27/092 ,  H01L27/02 ,  H01L27/088

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to stacked gate transistors and methods of manufacture. The structure includes a stacked gate structure having a plurality of transistors with at least one floating node and at least one node to either ground or a supply voltage, and a contact to either of the ground or supply voltage and the at least one floating node being devoid of any contact.