公开(公告)号：US20180233415A1

公开(公告)日：2018-08-16

申请号：US15947479

申请日：2018-04-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani PANDEY ,  Baofu ZHU ,  Srikanth Balaji SAMAVEDAM

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823481 ,  H01L21/823431 ,  H01L21/823468 ,  H01L27/0886 ,  H01L29/66818 ,  H01L29/7853

Abstract: A method for producing a finFET having a fin with thinned sidewalls on a lower portion above a shallow trench isolation (STI) regions is provided. Embodiments include forming a fin surrounded by STI regions on a substrate; recessing the STI regions, revealing an upper portion of the fin; forming a spacer over side and upper surfaces of the upper portion of the fin; recessing the STI regions, exposing a lower portion of the fin; and thinning sidewalls of the lower portion of the fin.

公开(公告)号：US20180040516A1

公开(公告)日：2018-02-08

申请号：US15229431

申请日：2016-08-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani PANDEY ,  Baofu ZHU ,  Srikanth Balaji SAMAVEDAM

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823481 ,  H01L21/823431 ,  H01L21/823468 ,  H01L27/0886 ,  H01L29/66818 ,  H01L29/7853

Abstract: A method for producing a finFET having a fin with thinned sidewalls on a lower portion above a shallow trench isolation (STI) regions is provided. Embodiments include forming a fin surrounded by STI regions on a substrate; recessing the STI regions, revealing an upper portion of the fin; forming a spacer over side and upper surfaces of the upper portion of the fin; recessing the STI regions, exposing a lower portion of the fin; and thinning sidewalls of the lower portion of the fin.