公开(公告)号：US09953831B1

公开(公告)日：2018-04-24

申请号：US15385949

申请日：2016-12-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven Shank ,  Randall Brault ,  Jay Burnham ,  John J. Ellis-Monaghan

IPC: H01L27/01 ,  H01L21/02 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762

CPC classification number: H01L21/02332 ,  H01L21/02362 ,  H01L21/7624 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/105 ,  H01L29/513 ,  H01L29/66628

Abstract: Device structures for field-effect transistors and methods of forming device structures for a field-effect transistor. A first dielectric layer is formed on a semiconductor layer and nitrided. A nitrogen-enriched layer is formed at a first interface between the first dielectric layer and the semiconductor layer. Another nitrogen-enriched layer is formed at a second interface between the semiconductor layer and a second dielectric layer. Device structures may include field-effect transistors that include one, both, and/or neither of the nitrogen-enriched layers.