公开(公告)号：US20180226394A1

公开(公告)日：2018-08-09

申请号：US15427128

申请日：2017-02-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chien-Hsin Lee ,  Mahadeva Iyer Natarajan ,  Manjunatha Prahbu

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L23/535

CPC classification number: H01L27/0262 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/785 ,  H01L29/87

Abstract: A fin field effect transistor (FinFET) ESD device is disclosed. The device may include: a substrate; a silicon-controlled rectifier (SCR) over the substrate, the SCR including: a p-well region over the substrate; an n-well region laterally abutting the p-well region over the substrate; a first P+ doped region over the p-well region; a first N+ doped region over the p-well region; and a second N+ doped region over the p-well region; and a Schottky diode electrically coupled to the n-well region, wherein the Schottky diode spans the n-well region and the p-well region, and wherein the Schottky diode controls electrostatic discharge (ESD) between the second N+ doped region and the n-well region.