公开(公告)号：US20170178953A1

公开(公告)日：2017-06-22

申请号：US14978650

申请日：2015-12-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunil Kumar SINGH ,  Sohan Singh MEHTA ,  Ravi Prakash SRIVASTAVA

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L21/76817 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528

Abstract: Back end of line via formation for semiconductor devices and methods of fabricating the semiconductor devices. One method includes, for instance: obtaining a wafer with a substrate and at least one contact in the substrate; depositing at least one lithography stack over the substrate; performing lithography to pattern at least one via opening; depositing a block co-polymer coating over the wafer into the at least one via opening; performing an ashing to remove excess block co-polymer material and form block co-polymer caps; and performing a thermal bake to separate the block co-polymer caps into a first material and a second material. An intermediate semiconductor device is also disclosed.