公开(公告)号：US20180366553A1

公开(公告)日：2018-12-20

申请号：US15624332

申请日：2017-06-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hui Zang ,  Bala Haran ,  Xuan Tran ,  Suryanarayana Kalaga

IPC: H01L29/49 ,  H01L23/535 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/768

Abstract: A method that includes forming an isolation material adjacent a fin, forming a sidewall spacer around a portion of the fin and above the isolation material and forming first and second conductive source/drain contact structures adjacent the sidewall spacer, wherein each of the first and second conductive source/drain contact structures has a side surface positioned proximate the sidewall spacer. In this example, the method further includes, after forming the source/drain contact structures, removing at least a portion of the sidewall spacer and forming a gate cap that is positioned above a final gate structure for the device, wherein the gate cap contacts the source/drain contact structures, and wherein an air gap is formed at least on opposite sides of the final gate structure above an active region of the device.