公开(公告)号：US11056591B2

公开(公告)日：2021-07-06

申请号：US16382184

申请日：2019-04-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jin Wallner ,  Heng Yang ,  Judson Robert Holt

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/10 ,  H01L27/088 ,  H01L21/84

Abstract: A method of forming a semiconductor device is provided, which includes providing gate structures over an active region and forming a hard mask segment on the active region positioned between a first gate structure and a second gate structure. Cavities are formed in the active region using the gate structures and the hard mask segment as masking features, wherein each cavity has a width substantially equal to a minimum gate-to-gate spacing of the semiconductor device. Epitaxial material is grown in the cavities to form substantially uniform epitaxial structures in the active region.