公开(公告)号：US11749671B2

公开(公告)日：2023-09-05

申请号：US17067033

申请日：2020-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Kaustubh Shanbhag ,  Glenn Workman

IPC: H01L27/02 ,  H01L21/8238 ,  H01L21/762

CPC classification number: H01L27/0207 ,  H01L21/7624 ,  H01L21/823892

Abstract: The disclosure provides integrated circuit (IC) structures and methods to form the same. Methods according to the disclosure may be performed on a substrate having a first doping type, the substrate extending between a first end and a second end. A deep well is formed within the substrate, the deep well including a well boundary defined between the deep well and a remainder of the substrate. The well boundary is horizontally distal to a midpoint between the first end and the second end of the substrate. A first active semiconductor region is formed at least partially over the substrate, and an oppositely-doped second active semiconductor region is formed at least partially over the deep well.

公开(公告)号：US20220115368A1

公开(公告)日：2022-04-14

申请号：US17067033

申请日：2020-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Kaustubh Shanbhag ,  Glenn Workman

IPC: H01L27/02 ,  H01L21/762 ,  H01L21/8238

Abstract: The disclosure provides integrated circuit (IC) structures and methods to form the same. Methods according to the disclosure may be performed on a substrate having a first doping type, the substrate extending between a first end and a second end. A deep well is formed within the substrate, the deep well including a well boundary defined between the deep well and a remainder of the substrate. The well boundary is horizontally distal to a midpoint between the first end and the second end of the substrate. A first active semiconductor region is formed at least partially over the substrate, and an oppositely-doped second active semiconductor region is formed at least partially over the deep well.