公开(公告)号：US11158633B1

公开(公告)日：2021-10-26

申请号：US16842075

申请日：2020-04-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Sipeng Gu ,  Shesh Mani Pandey ,  Lixia Lei ,  Gregory Costrini

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/78

Abstract: One illustrative device disclosed herein includes at least one fin structure and an isolation structure comprising a stepped upper surface comprising a first region and a second region. The first region has a first upper surface and the second region has a second upper surface, wherein the first upper surface is positioned at a first level and the second upper surface is positioned at a second level and wherein the first level is below the second level. In this illustrative example, the device also includes a gate structure comprising a first portion and a second portion, wherein the first portion of the gate structure is positioned above the first upper surface of the isolation structure and above the at least one fin structure and wherein the second portion of the gate structure is positioned above the second upper surface of the isolation structure.

公开(公告)号：US20210313321A1

公开(公告)日：2021-10-07

申请号：US16842075

申请日：2020-04-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Sipeng Gu ,  Shesh Mani Pandey ,  Lixia Lei ,  Gregory Costrini

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8234

Abstract: One illustrative device disclosed herein includes at least one fin structure and an isolation structure comprising a stepped upper surface comprising a first region and a second region. The first region has a first upper surface and the second region has a second upper surface, wherein the first upper surface is positioned at a first level and the second upper surface is positioned at a second level and wherein the first level is below the second level. In this illustrative example, the device also includes a gate structure comprising a first portion and a second portion, wherein the first portion of the gate structure is positioned above the first upper surface of the isolation structure and above the at least one fin structure and wherein the second portion of the gate structure is positioned above the second upper surface of the isolation structure.