公开(公告)号：US20250149499A1

公开(公告)日：2025-05-08

申请号：US18504526

申请日：2023-11-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ravi Prakash SRIVASTAVA ,  Matthew Charles GORFIEN

IPC: H01L23/00

Abstract: A method for hybrid bonding a first semiconductor substrate to a second semiconductor substrate includes forming a first plurality of metal pads on a face of the first substrate, forming a second plurality of metal pads on a face of the second substrate, selectively forming a first dielectric layer over a first insulating material of the first substrate, selectively forming a second dielectric layer over a second insulating material of the second substrate, placing the face of the first substrate against the face of the second substrate so that the first dielectric layer contacts the second dielectric layer, and heating the first substrate and the second substrate to bond the first plurality of metal pads to the second plurality of metal pads. The first and second dielectric layers may be formed by an area selective deposition process.