公开(公告)号：US20230268335A1

公开(公告)日：2023-08-24

申请号：US17679655

申请日：2022-02-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Juhan KIM ,  Sangmoon J. KIM ,  Mahbub RASHED ,  Navneet K. JAIN

IPC: H01L27/02

CPC classification number: H01L27/0207

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to cell layouts in semiconductor structures and methods of manufacture. A structure includes: a plurality of abutting cells each of which include transistors with gate structures having diffusion regions; a contact spanning across abutting cells of the plurality of abutting cells and contacting to the diffusion regions of separate cells of the abutting cells; and a continuous active region spanning across the plurality of abutting cells, wherein the continuous active region includes a drain-source abutment with L-shape construct, a source-source abutment with U-shape construct, and a drain-drain abutment with a filler cell located between a drain-drain abutment.