公开(公告)号：US20220173211A1

公开(公告)日：2022-06-02

申请号：US17108543

申请日：2020-12-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Brett T. CUCCI ,  Siva P. ADUSUMILLI ,  Johnatan A. KANTAROVSKY ,  Claire E. KARDOS ,  Sen LIU

IPC: H01L29/06 ,  H01L21/764 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgap isolation structures and methods of manufacture. The structure includes: a bulk substrate material; a first airgap isolation structure in the bulk substrate material and having a first aspect ratio; and a second airgap isolation structure in the bulk substrate material and having a second aspect ratio different from the first aspect ratio.