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公开(公告)号：US4550257A
公开(公告)日：1985-10-29
申请号：US626178
申请日：1984-06-29
IPC分类号： H01L21/3205 , C23C16/04 , H01J37/317 , H01J37/32
CPC分类号： B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J37/32 , H01J2237/31738 , H01J2237/31759 , Y10S977/857
摘要： The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.
摘要翻译： 使用穿过气体的隧道电流来实现8埃量级的线的形成，该气体改变以提供作为线的基础的残留物。 隧道电流能量被调节到解离气体所需的能量。
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2.发明授权In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage 失效使用低振幅输入电压进行化学机械抛光的原位端点检测方法和装置
公开(公告)号：US5337015A
公开(公告)日：1994-08-09
申请号：US75628
申请日：1993-06-14
IPC分类号： B24B37/013 , G01B7/34 , G01D5/24 , G01R27/26
CPC分类号： B24B37/013 , G01B7/345 , G01D5/2405
摘要： An in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control.
摘要翻译： 公开了一种在半导体晶片的顶表面上的电介质层的用于化学机械抛光（CMP）的原位厚度监测/终点检测方法和装置。 该装置包括中心和保护电极以及相关联的电子电路，包括用于将与电介质层厚度成反比的电流转换成对应的模拟电压的高频低电压信号发生装置。 当晶片被抛光时，位置检测装置触发模数转换器将模拟电压转换为数字信号，同时晶片位于检测区域内。 控制装置收集与用于处理的厚度数据相对应的数字信号和CMP装置控制。
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