公开(公告)号：US20250107460A1

公开(公告)日：2025-03-27

申请号：US18760041

申请日：2024-07-01

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiaomin CHENG ,  Lijuan CAO ,  Yunhao LUO ,  Jiaqi LI ,  Xiangshui MIAO

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: Disclosed is a temperature sensing and computing device and array based on TaOx electronic memristor, including a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top; a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer; the function layer is TaOx material; the first metal layer is grounded, and positive and negative voltages are applied to the second metal layer; in which an output current when the negative voltage is applied to the second metal layer is greater than an output current when the positive voltage of the same magnitude is applied to the second metal layer, and there is a self-rectifying effect; when the voltage of the same magnitude is applied to the second metal layer, the output current increases as a temperature increases.