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    Thin film magnetic head
    6.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：US06621660B2

    公开(公告)日：2003-09-16

    申请号：US09764019

    申请日：2001-01-16

    申请人： Richard Hsiao ,  Neil Leslie Robertson ,  Patrick Rush Webb

    发明人： Richard Hsiao ,  Neil Leslie Robertson ,  Patrick Rush Webb

    IPC分类号： G11B5147

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3133 ,  Y10T29/4906

    摘要： The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.

    摘要翻译： 本发明的磁头的电镀部件利用易受反应离子蚀刻去除技术影响的晶种层来制造。 优选的种子层由钨或钛组成。 在利用氟物质反应离子蚀刻工艺对组分进行电镀之后，除去种子层，并且显着地，氟RIE工艺产生气态钨或氟化钛化合物去除产物。 由于气态氟化物不再沉积，克服了沿着电镀部件侧面的种子层再沉积的问题。 本发明还包括增强的两部分种子层，其中下部是钨，钛或钽，并且上部由构成待电镀部件的材料构成。

    Method for fabricating a magnetic head
    8.
    发明授权
    Method for fabricating a magnetic head 有权
    磁头制造方法

    公开(公告)号：US07228618B2

    公开(公告)日：2007-06-12

    申请号：US10970632

    申请日：2004-10-20

    申请人： Mustafa Pinarbasi ,  Patrick Rush Webb

    发明人： Mustafa Pinarbasi ,  Patrick Rush Webb

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49067

    摘要： A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.

    摘要翻译： 具有自旋阀传感器的磁头，其使用随后制造PtMn自旋阀传感器层结构的Al 2 O 3 N，NiMnO，Si种子层制造。 在优选实施例中，Si层的厚度约为20埃，PtMn层的厚度约为120埃。 Si层的替代制造工艺包括将该层过度沉积到第一厚度为从Å至Å至的第一厚度，接着将种子层的蚀刻回到大约5至大约15至所期望的最终厚度约为20 一个。 Si层导致随后制备的PtMn和其它自旋阀传感器层的改进的晶体结构，使得制造的自旋阀更薄并且表现出增加的DeltaR / R和降低的矫顽力。

    Methods of making magnetic heads with improved contiguous junctions
    10.
    发明授权
    Methods of making magnetic heads with improved contiguous junctions 失效
    制造具有改进的连续结的磁头的方法

    公开(公告)号：US06996894B2

    公开(公告)日：2006-02-14

    申请号：US10109110

    申请日：2002-03-28

    申请人： Richard Hsiao ,  Wipul Pemsiri Jayasekara ,  Mustafa Pinarbasi ,  Patrick Rush Webb

    发明人： Richard Hsiao ,  Wipul Pemsiri Jayasekara ,  Mustafa Pinarbasi ,  Patrick Rush Webb

    IPC分类号： G11B5/127 ,  B44C1/22

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask. The reduced-size lift-off mask allows the amount of hard bias to be increased in the contiguous junction region, and the edges of the leads to be deposited more closely over the top edges of the read sensor. Advantageously, the stability of the sensor is enhanced and the transfer curve is improved using a method which can be controlled independently from the initial mask structure and ion milling process. No critical alignments or multiple photoresist processes are necessary.

    摘要翻译： 描述了制造具有改进的连续结的读取头的方法。 在传感器层材料沉积在衬底上之后，在由端部区域包围的中心区域中的传感器层材料上形成剥离掩模。 使用剥离掩模进行离子铣削，使得端部区域中的传感器层材料被去除，并且在中心区域中的传感器层材料保持形成读取传感器。 然后执行高角度离子磨（例如在45-80度之间）以从剥离掩模的侧壁去除再沉积的材料。 接下来，使用反应离子蚀刻（RIE）来减小剥离掩模的厚度和宽度，并从读取传感器的顶部边缘去除封盖层材料。 随着尺寸减小的剥离掩模就位，硬读取传感器以及掩模附近沉积了硬偏置和引线层。 缩小尺寸的剥离掩模允许在连续接合区域中增加硬偏置的量，并且引线的边缘更紧密地沉积在读取传感器的顶部边缘上。 有利地，增强了传感器的稳定性，并且使用可以独立于初始掩模结构和离子铣削过程进行控制的方法来提高传递曲线。 不需要临界对准或多个光刻胶工艺。