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21 条记录 (耗时 0.052 秒)

    Power semiconductor device and fabrication method thereof
    4.
    发明授权
    Power semiconductor device and fabrication method thereof 失效
    功率半导体器件及其制造方法

    公开(公告)号：US08772833B2

    公开(公告)日：2014-07-08

    申请号：US13592560

    申请日：2012-08-23

    申请人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

    发明人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

    IPC分类号： H01L29/15

    CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

    摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

    摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

    Switching circuit for millimeter waveband control circuit
    5.
    发明授权
    Switching circuit for millimeter waveband control circuit 有权
    毫米波段控制电路的开关电路

    公开(公告)号：US07889023B2

    公开(公告)日：2011-02-15

    申请号：US12139046

    申请日：2008-06-13

    申请人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

    发明人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

    IPC分类号： H01P1/10 ,  H01P3/08

    CPC分类号： H03K17/063 ,  H01P1/15 ,  H03K17/693 ,  H03K2017/066

    摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.

    摘要翻译： 提供了一种用于毫米波段控制电路的开关电路。 毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔 输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。 因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本 制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

    SWITCHING CIRCUIT FOR MILLIMETER WAVEBAND CONTROL CIRCUIT
    7.
    发明申请
    SWITCHING CIRCUIT FOR MILLIMETER WAVEBAND CONTROL CIRCUIT 有权
    用于微波波形控制电路的切换电路

    公开(公告)号：US20090146724A1

    公开(公告)日：2009-06-11

    申请号：US12139046

    申请日：2008-06-13

    申请人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

    发明人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

    IPC分类号： H03K17/06

    CPC分类号： H03K17/063 ,  H01P1/15 ,  H03K17/693 ,  H03K2017/066

    摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.

    摘要翻译： 提供了一种用于毫米波段控制电路的开关电路。 毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔 输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。 因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本 制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

    Field effect transistor and method for manufacturing the same
    8.
    发明授权
    Field effect transistor and method for manufacturing the same 有权
    场效应晶体管及其制造方法

    公开(公告)号：US07387955B2

    公开(公告)日：2008-06-17

    申请号：US11454721

    申请日：2006-06-16

    申请人： Ho Kyun Ahn ,  Jong Won Lim ,  Jae Kyoung Mun ,  Hong Gu Ji ,  Woo Jin Chang ,  Hea Cheon Kim

    发明人： Ho Kyun Ahn ,  Jong Won Lim ,  Jae Kyoung Mun ,  Hong Gu Ji ,  Woo Jin Chang ,  Hea Cheon Kim

    IPC分类号： H01L21/44

    CPC分类号： H01L29/812 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66856 ,  H01L29/778

    摘要： A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.

    摘要翻译： 提供具有头部比脚部宽的T形或γ形的精细栅电极的场效应晶体管，以及制造场效应晶体管的方法。 使用具有不同蚀刻速率的多层结构的绝缘层，在栅电极的头部和半导体衬底之间形成空隙。 由于栅电极和半导体衬底之间的寄生电容由于空隙而减小，所以能够使栅电极的头部大，能够降低栅极电阻。 此外，由于可以通过调节绝缘层的厚度来调节栅电极的高度，因此可以提高器件性能以及工艺的均匀性和重复性。

    Method of manufacturing field effect transistor
    9.
    发明授权
    Method of manufacturing field effect transistor 有权
    制造场效应晶体管的方法

    公开(公告)号：US07183149B2

    公开(公告)日：2007-02-27

    申请号：US11180726

    申请日：2005-07-14

    申请人： Ho Kyun Ahn ,  Jong Won Lim ,  Hong Gu Ji ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Hae Cheon Kim

    发明人： Ho Kyun Ahn ,  Jong Won Lim ,  Hong Gu Ji ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Hae Cheon Kim

    IPC分类号： H01L21/338

    CPC分类号： H01L29/66856 ,  H01L29/66462

    摘要： Provided is a method of manufacturing a field effect transistor (FET). The method includes steps of: forming an ohmic metal layer on a substrate in source and drain regions; sequentially forming an insulating layer and a multilayered resist layer on the entire surface of the resultant structure and simultaneously forming resist patterns having respectively different shapes in both a first region excluding the ohmic metal layer and a second region excluding the ohmic metal layer, wherein a lowermost resist pattern is exposed in the first region, and the insulating layer is exposed in the second region; exposing the substrate and the insulating layer by simultaneously etching the exposed insulating layer and the exposed lowermost resist pattern using the resist patterns as etch masks, respectively; performing a recess process on the exposed substrate and etching the exposed insulating layer to expose the substrate; and forming gate recess regions having different etching depths from each other over the substrate, depositing a predetermined gate metal, and removing the resist patterns. In this method, transistors having different threshold voltages can be manufactured without additional mask patterns using the least number of processes, with the results that the cost of production can be reduced and the stability and productivity of semiconductor devices can be improved.

    摘要翻译： 提供了制造场效应晶体管（FET）的方法。 该方法包括以下步骤：在源极和漏极区域的衬底上形成欧姆金属层; 在所得结构的整个表面上顺序地形成绝缘层和多层抗蚀剂层，并且同时形成除了欧姆金属层以外的第一区域和不包括欧姆金属层的第二区域中具有不同形状的抗蚀剂图案，其中最下面 抗蚀剂图案在第一区域中暴露，并且绝缘层在第二区域中暴露; 通过分别使用抗蚀剂图案作为蚀刻掩模，同时蚀刻暴露的绝缘层和暴露的最下面的抗蚀剂图案来暴露衬底和绝缘层; 对曝光的衬底进行凹陷处理并蚀刻暴露的绝缘层以露出衬底; 以及在衬底上形成具有彼此不同蚀刻深度的栅极凹陷区域，沉积预定的栅极金属和去除抗蚀剂图案。 在该方法中，可以使用最少数量的工艺来制造具有不同阈值电压的晶体管，而不需要额外的掩模图案，结果可以降低生产成本，并且可以提高半导体器件的稳定性和生产率。

    High-isolation switching device for millimeter-wave band control circuit
    10.
    发明授权
    High-isolation switching device for millimeter-wave band control circuit 有权
    用于毫米波段控制电路的高隔离开关装置

    公开(公告)号：US07671697B2

    公开(公告)日：2010-03-02

    申请号：US11928410

    申请日：2007-10-30

    申请人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

    发明人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

    IPC分类号： H01P1/10 ,  H01L29/80

    CPC分类号： H01P1/15

    摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

    摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要设置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。