公开(公告)号：US11610980B2

公开(公告)日：2023-03-21

申请号：US17210110

申请日：2021-03-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Changyong Xiao ,  Jie Chen

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

Abstract: A method for processing a forksheet device includes providing a substrate and forming a trench in the substrate, extending along a first direction, in the substrate. The formation of the trench includes forming a grating structure on the substrate that includes a pair of maskings, arranged at a distance from each other, and etching the trench into the substrate in a region between the pair of maskings. The method also includes filling the trench with a filling material and partially recessing the substrate to form a fin structure. This fin structure includes the filled trench, a first section of the substrate at a first side of the filled trench and a second section of the substrate at a second side of the filled trench, and forming a gate structure on and around the fin structure. The method additionally includes forming a gate structure on and around the fin structure.

公开(公告)号：US20210305412A1

公开(公告)日：2021-09-30

申请号：US17210110

申请日：2021-03-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Changyong Xiao ,  Jie Chen

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L21/762 ,  H01L29/06

Abstract: A method for processing a FinFET device, such as a Forksheet device, comprises providing a substrate, and forming a trench in the substrate. The trench extends along a first direction. The method further comprises filling the trench with a filling material, and partially recessing the substrate to form a fin structure. The fin structure comprises the filled trench, a first section of the substrate at a first side of the filled trench and a second section of the substrate at a second side of the filled trench, and forming a gate structure on and around the fin structure.