公开(公告)号：US09302905B1

公开(公告)日：2016-04-05

申请号：US14738980

申请日：2015-06-15

Applicant: Innovative Micro Technology

Inventor： Suresh K Sampath

IPC: H01L21/00 ,  B81C1/00 ,  H01L21/027

CPC classification number: B81C1/00412 ,  B81C2201/0143 ,  H01L21/0272 ,  H01L21/32139 ,  H01L43/12

Abstract: A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.

Abstract translation: 一种用于在器件层中形成特征的方法，包括在剥离材料上形成第一层剥离材料和第二层光致抗蚀剂，暴露光致抗蚀剂并显影光致抗蚀剂和剥离层。 光致抗蚀剂以比剥离层更慢的速率显影。 显影导致剥离层中的第一开口和光致抗蚀剂层中的第二开口，其中由于不同的显影速率，第一开口小于第二开口。 然后将器件层干蚀刻或通过开口离子研磨。 随后去除第一层和第二层离开图案化的器件层的干净的表面，而不需要使用其它方法形成的栅栏。