公开(公告)号：US20200162024A1

公开(公告)日：2020-05-21

申请号：US16192841

申请日：2018-11-16

Applicant: Intel Corporation

Inventor： Dmitri E. Nikonov ,  Raseong Kim ,  Sasikanth Manipatruni ,  Ian A. Young ,  Gary Alfred Allen ,  Tanay Gosavi

IPC: H03B5/24 ,  H01L29/78 ,  H01L27/06

Abstract: Embodiments may relate to a piezoresistive oscillator. The oscillator may include a fin field-effect transistor (FinFET) with a source electrode, a drain electrode, and a gate electrode. The oscillator may further include an electrical coupling coupled with the FinFET, wherein the electrical coupling electrically couples the gate electrode to the source electrode or the drain electrode. Other embodiments may be described or claimed.